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| JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity. Complement to type 2SD1212 APPLICATIONS Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. High-speed switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SB903 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -60 -30 -6 -12 -20 1.75 PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ae ae W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors 2SB903 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-offcurrent Emitter cut-offcurrent DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ; IE=0 IC=-1mA ;RBE= IE=-1mA ; IC=0 IC=-5A, IB=-0.25A VCB=-40V;IE=0 VEB=-4V;IC=0 IC=-1A ; VCE=-2V IC=-6A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 120 MHz MIN -60 -30 -6 -0.5 -0.1 -0.1 280 TYP MAX UNIT V V V V mA mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5A ;IB1=-IB2=-0.5A; VCC=-10V;RL=2| 0.10 0.30 0.03 |I |I |I s s s hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB903 Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB903 4 |
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